Zhuzhou Keneng Molecular Beam Epitaxy (MBE) grade high-purity gallium passed the trial of the Institute of Semiconductors (IOS)， Chinese Academy of Sciences

Recently, the Institute of Semiconductors of the Chinese Academy of Sciences used the MBE-grade high-purity gallium produced by our company for the growth of molecular beam epitaxy GaAs-based materials, and successively grown undoped GaAs thin films and AlGaAs/GaAs two-dimensional electron gas materials. which fully meet the requirements of molecular beam epitaxy for high-end material growth.